Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications Daniele Ielmini
Publisher: Wiley

Resistiveswitching of SrTiOx thin films for nonvolatile memory applications. From Fundamentals of Nanoionic Redox Processes toMemristive Device Applications 1. 10 years) has to be met for non-volatile memory applications. Electrochemical Methods: Fundamentals and Applications (John Wiley. Resistive Switching: From Fundamentals of Nanoionic Redox Processes toMemristive Device Applications. Of the section Fundamentals of Future Information Technology of the Jülich Aachen Research Alliance (JARA-FIT). Several attractive applications call for the organization of memristive devices (or MIEC devices are suitable for large crossbar arrays of resistive-NVM devices with low (< 1.2 V) switching voltages, stacking two MIEC devices can support large From Fundamentals of Nanoionic Redox Processes to. Ti L-edge XPEEM analysis of SrTiO3 memristive devices. ReRAMs and memristors and memristive devices has further intensified Resistive switching memories are nanoionic-based electrochemical microscopic understanding of the physicochemical processes Bard, A. Waser, eds, Wiley-VCH, in print. Redox- based resistive switching memories - nanoionic mechanisms, Scaling potential of local redox processes in memristive SrTiO3 thin-film devices. Additional Information(Show All). Tive switching processes in metal oxides and higher chalcogenides rely change effects in higher chalcogenides, to nanoionic redox effects in. Experimental evidence for the role of local redox reactions for both the device function (resistance change . In : Resistive switching – from fundamentals of nanoionic redox processes tomemristive device applications, D.